Transitioning digital integrated circuit from standby mode to active mode via backgate charge transfer

ABSTRACT

Circuits and methods are provided for facilitating transitioning of a digital circuit from backgate biased standby mode to active mode. The digital circuit includes a semiconductor substrate, multiple n-channel transistors disposed at least partially in one or more p-type wells in the semiconductor substrate, multiple p-channel transistors disposed at least partially in one or more n-type wells in the semiconductor substrate, and a backgate control circuit. The backgate control circuit is electrically coupled to the p-type well(s) and to the n-type well(s) to facilitate transitioning of the multiple n-channel transistors and the multiple p-channel transistors from backgate biased standby mode to active mode by automatically shunting charge from the n-type well(s) to the p-type well(s) until a well voltage threshold is reached indicative of a completed transition of the transistors from backgate biased standby mode to active mode.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of co-pending U.S. patentapplication Ser. No. 12/206,124, filed Sep. 8, 2008, entitled“Transitioning Digital Integrated Circuit from Standby Mode to ActiveMode Via Backgate Charge Transfer”, which published on Mar. 11, 2010, asU.S. Patent Publication No. 2010/0060344 A1, the entirety of which ishereby incorporated herein by reference.

TECHNICAL FIELD

The present invention relates in general to digital integrated circuits,and more particularly, to transitioning a digital integrated circuit,such as a memory circuit, from a backgate biased standby mode to anactive mode.

BACKGROUND OF THE INVENTION

Transistors, such as n-channel field effect transistors (NFET) andp-channel field effect transistors (PFET), formed in acomplementary-metal-oxide silicon (CMOS) integrated circuit, operatewhen an input voltage is applied to a gate voltage. This gate voltageestablishes an electric field perpendicular to a channel between asource and drain of the transistor. A conductance of the channel iscontrolled by the electric field. If no gate voltage is applied, a pathbetween the source and drain is formed as two back-to-back p-njunctions, and the drain current is negligible. When a positive voltageis applied to the gate of the transistor, electrons are attracted to thechannel. When the gate voltage exceeds a threshold level, an inversionlayer is formed in the channel to couple the source and drain. Thethreshold voltage level of a transistor is dependent on severalvariables, both controllable and uncontrollable.

In order to save power when not in use, CMOS transistors are typicallytransitioned to a standby mode to reduce their power consumption. Fastswitching (or wake-up) of the transistors from standby mode to activemode is a goal for processing efficiency. External power and high-speedcharge circuits are typically implemented to improve switching speedfrom standby mode to active mode.

SUMMARY OF THE INVENTION

Presented herein is a new approach for quickly and efficiently switchinga digital circuit comprising one or more n-channel transistors and oneor more p-channel transistors, such as a memory circuit, from backgatebiased standby mode to active mode.

In one aspect, a digital circuit is provided which includes asemiconductor substrate, at least one n-channel transistor and at leastone p-channel transistor. The at least one n-channel transistor has agate, a drain and a source disposed at least partially in at least onep-type well in the semiconductor substrate, and the at least onep-channel transistor has a gate, a drain and a source disposed at leastpartially in at least one n-type well in the semiconductor substrate.The digital circuit further includes a backgate control circuit which iselectrically coupled to the at least one p-type well and to the at leastone n-type well to, in part, facilitate transitioning the at least onen-channel transistor and the at least one p-channel transistor fromstandby mode to active mode by shunting charge from the at least onen-type well to the at least one p-type well.

In another aspect, a method of transitioning a digital circuit from abackgate biased standby mode to an active mode is provided. The methodincludes: shunting charge from at least one n-type well to at least onep-type well in a semiconductor substrate of the digital circuit, thedigital circuit comprising at least one p-channel transistor having agate, a drain, and a source disposed at least partially within the atleast one n-type well, at least one n-channel transistor having a gate,a drain and a source disposed at least partially within the at least onep-type well; monitoring a well voltage of at least one well of the atleast one n-type well and the at least one p-type well; anddiscontinuing shunting of charge from the at least one n-type well tothe at least one p-type well when the monitored well voltage reaches adefined threshold voltage indicative of a transition of the at least onep-channel transistor or the at least n-channel transistor from backgatebiased standby mode to active mode.

In a further aspect, a method of fabricating a digital circuit isprovided which includes: obtaining a semiconductor substrate; disposingat least one p-type well in the semiconductor substrate and disposing atleast one n-type well in the semiconductor substrate; providing at leastone n-channel transistor having a gate, a drain and a source disposed atleast partially in the at least one p-type well, and providing at leastone p-channel transistor having a gate, a drain and a source disposed atleast partially in the at least one n-type well; and providing abackgate control circuit electrically coupled to the at least one p-typewell and to the at least one n-type well to facilitate transitioning ofthe at least one n-channel transistor and the at least one p-channeltransistor from standby mode to active mode by shunting charge from theat least one n-type well to the at least one p-type well.

Further, additional features and advantages are realized through thetechniques of the present invention. Other embodiments and aspects ofthe invention are described in detail herein and are considered a partof the claimed invention.

BRIEF DESCRIPTION OF THE DRAWINGS

The subject matter which is regarded as the invention is particularlypointed out and distinctly claimed in the claims at the conclusion ofthe specification. The foregoing and other objects, features, andadvantages of the invention are apparent from the following detaileddescription taken in conjunction with the accompanying drawings inwhich:

FIG. 1A is a partial cross-sectional elevational view of one embodimentof a digital circuit comprising one or more n-channel transistors andone or more p-channel transistors to undergo transitioning from astandby mode to an active mode, in accordance with an aspect of thepresent invention;

FIG. 1B is a schematic depiction of the n-channel field effecttransistor (NFET) of FIG. 1A, in accordance with an aspect of thepresent invention;

FIG. 1C is a schematic depiction of the p-channel field effecttransistor (PFET) of FIG. 1A, in accordance with an aspect of thepresent invention;

FIG. 2 is a schematic of one embodiment of a digital integrated circuitchip, with a backgate control circuit for controlling backgate voltagewithin the digital integrated circuit employing an external powersource;

FIG. 3A is a cross-sectional elevational view of the digital circuit ofFIG. 1A, illustrating viewing of the transistors to backgate bodies asbackgate capacitors capable of holding charge, in accordance with anaspect of the present invention;

FIG. 3B is a schematic depiction of the NFET to backgate body capacitorsof FIG. 3A, in accordance with an aspect of the present invention;

FIG. 3C is a schematic depiction of the PFET to backgate body capacitorsof FIG. 3A, in accordance with an aspect of the present invention;

FIG. 4A is a schematic of one embodiment of a digital circuit andbackgate control circuit for facilitating transitioning of transistorsof the digital circuit from standby mode to active mode;

FIG. 4B is a more detailed depiction of the digital circuit and backgatecontrol circuit embodiment of FIG. 4A, wherein a power source externalto the digital circuit is employed to provide the large current required(in one embodiment) for a fast backgate voltage transition to achieve afast digital circuit transition from standby to active mode;

FIG. 5 is a schematic of an alternate embodiment of a digital circuitwith a backgate control circuit, in accordance with an aspect of thepresent invention;

FIG. 6 is a more detailed embodiment of a digital circuit with abackgate control circuit, in accordance with an aspect of the presentinvention;

FIG. 7 is a flowchart of one embodiment of processing for transitioningtransistors of a digital circuit from backgate biased standby mode toactive mode, in accordance with an aspect of the present invention; and

FIG. 8 is a graph of transition time from standby mode to active mode,employing the externally powered transition approach of FIGS. 4A & 4Bcompared with the backgate charge transfer approach depicted in FIGS.5-7, in accordance with an aspect of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

In the following detailed description of the invention, reference ismade to the accompanying drawings which form a part hereof, and in whichare shown, by way of illustration only, specific embodiments of theinvention. In the drawings, like numerals describe substantially similarcomponents throughout the several views. These embodiments areillustrated in sufficient detail to enable one skilled in the art topractice the invention. Other embodiments may be utilized andstructural, logical and electrical changes may be made without departingfrom the scope of the present invention.

The present invention relates in general to circuits and methods forenhancing switching speed of, for example, a memory circuit comprisingcomplementary-metal oxide silicon (CMOS) transistors from standby modeto active mode. As used herein, “active mode” means circuit conditionsare controlled for a maximum and nominal performance. Nominal powersupply voltage is given without backgate biasing, and clock speed isclose to the maximum specification. In active mode, an n-well ismaintained at the power supply voltage, and a p-well is maintained atground voltage, without backgate biasing. A “standby mode” or “sleepmode” means circuit conditions are changed for lower power consumptionwith reduced computing performance. There are different levels ofstandby mode, include shallow standby and deep standby. Lower thannominal power supply can be given, with backgate biasing applied.Backgate biasing is one lower power operation technique. In standbymode, clock speed is lower than the maximum specification, and may beclose to zero, or zero itself. For backgate biasing, the n-well voltageis higher than the power supply voltage, and the p-well voltage is lowerthan the ground voltage. “Backgate biased standby mode” means a modewith reduced leakage power consumption and clock speed (and performance)using backgate voltage control. The power supply voltage could be thesame or lower than in the active mode, and backgate voltages areapplied. Clock speed is lower, as is leakage current and performance.The backgate biased standby mode (or backgate biased sleep mode) can beconsidered a shallow standby mode, so that it can be achieved quickly. Adeeper standby mode could be obtained by powering down all digitalcircuits in the domain. This would be an extreme technique for savingpower, and would result in longer time to wake up the digital circuits.

Conventionally, a CMOS digital circuit (for example, fabricated via atriple-well CMOS process) comprises both n-channel field effecttransistors (NFETs) and p-channel filed effect transistors (PFETs),either of which may be placed in standby or sleep mode in a bulk CMOSdigital circuit employing a backgate bias. The backgate refers to thep-type well (or n-type well) within which the NFETs (or p-channel fieldeffect transistors (PFETs)) are formed. Fast transitioning of the CMOSdigital circuit from backgate biased standby to active mode is asignificant issue. As described further below, in one approach, highspeed charge transfer circuits may be implemented to enhance thetransition speed from standby to active mode.

FIGS. 1A-1C depict one example of a digital integrated circuit,generally denoted 100, to undergo transition from standby mode to activemode, in accordance with an aspect of the present invention. Referringcollectively to the figures, digital circuit 100 includes asemiconductor substrate 110 with a p-type well (or p-well) and an n-typewell (or n-well) formed therein from a surface 111 of semiconductorsubstrate 110. As illustrated, p-type well 120 accommodates one or moren-channel transistors 125, each comprising a source 126, a drain 127,and a gate stack 128. Additionally, a backgate body contact 129 isformed in p-well 120 to facilitate electrical contact to that backgatebody. Similarly, n-type well 130 accommodates one or more p-channeltransistors 135, each comprising a source 136, a drain 137 and a gate138 disposed at least partially within the n-type well. Further,electrical contact is made to n-well 130 via a backgate body contact139. FIGS. 1B & 1C schematically illustrate the transistor structures ofFIG. 1A.

FIG. 2 illustrates one approach for transitioning a digital integratedcircuit from standby mode to active mode. In FIG. 2, digital circuit 210resides within an integrated circuit chip 200, and comprises one or moretransistors 220. In one embodiment, transistors 220 comprise a pluralityof n-channel transistors configured to implement, for example, a memorycircuit such as a static random access memory (SRAM). Digital circuit210 is electrically connected between a circuit power source VDD_(ckt)and ground GND_(ckt). A backgate control circuit 230 is provided withinintegrated circuit chip 200 for monitoring and controlling of thebackgate voltage within the p-wells and n-wells of digital circuit 210.

Backgate control circuit 230 operates to adjust the voltage level withinthe wells, for example, to adjust the power consumption (and devicespeed) of the transistors, and thus, the power consumption of thedigital circuit. When the backgate control circuit 230 is to change thebackgate voltage very fast, a large current may be employed from asource external to integrated circuit chip 200. This large current issupplied (in one example) by external power circuit 240, which includesa backgate power source 250 that comprises backgate voltage supplyVDD_(BG) and backgate ground GND_(BG). Power source 250 is electricallycoupled to backgate control circuit 230 via appropriate wiring 251, 252.Due to the size of the charge being transferred from external powercircuit 240 to backgate control circuit 230, and subsequently to thebackgate bodies, wiring parasitics within wiring 251 and 252 may causethe power transfer to be restricted, thus limiting the transition speedof the digital circuit 210 from, for example, standby mode to activemode.

The bodies of the backgates (i.e., the p-type wells and the n-typewells) within the semiconductor substrate may be viewed as formingbackgate capacitors with the transistors. For example, referringcollectively to FIGS. 3A-3C, a capacitor 300 is formed between p-well120 and NFET source 126 of NFET 125, a capacitor 301 is formed betweenNFET drain 127 and p-well 120, and a capacitor 302 is formed betweengate NFET 128 and p-well 120. These backgate capacitors areschematically illustrated in FIG. 3B as separate capacitors, but mayalso be viewed at the digital circuit level as a single collectivecapacitance. Similarly, a capacitor 310 forms between n-well 130 andPFET source 136, a capacitor 311 exists between n-well 130 and PFETdrain 137, and a capacitor 312 resides between n-well 130 and PFET gate138 of PFET 135 of digital circuit 100. In one embodiment, digitalcircuit 100 comprises a plurality of NFETs and a plurality of PFETsrespectively disposed in one or more p-wells and n-wells withinsemiconductor substrate 110. As noted above, electrical connection top-well 120 is via an NFET backgate body contact 129 and electricalconnection to n-well 130 is via a PFET backgate body connection 139.

In FIGS. 4A & 4B, a digital circuit 400 is illustrated. Digital circuit400 comprises multiple PFET and NFET transistors 410, which may includeone or more n-channel transistors and one or more p-channel transistors.A backgate control circuit 420, comprising a PFET backgate control andan NFET backgate control, is coupled to each backgate body, that is, tothe p-wells and n-wells within which the n-channel and p-channeltransistors are formed (as described above). Backgate control circuit420 is coupled between a power supply 421 and ground 422.

In the more detailed embodiment of FIG. 4B, the transistors of digitalcircuit 400 are depicted as backgate capacitances to be transitionedfrom standby to active mode levels. Backgate control circuit 420controls the transitioning process. In order to achieve fast backgatetransition of the digital circuit, a large current (for example, 1-10amps) may be required instantaneously (i.e., in a very short time periodin the order of nano-seconds) from an external power circuit 440, whichincludes a power supply 450 and wiring 451, 452 coupling the powersupply to backgate control circuit 420. As noted above, parasiticswithin wiring 451, 452 can create a bottleneck which limits the amountof surge current supplied through the power lines to the backgatecontrol circuit 420 for transitioning the backgate voltages of thedigital circuit. Providing a decoupling capacitor and wider power linescan be used to mitigate these parasitics, but a bottleneck still remainsin the wiring employed to transfer the charge from the external powersource into the digital circuit.

FIG. 5 illustrates an alternative approach to transitioning the digitalcircuit from standby mode to active mode. In accordance with thisapproach, both NFETs and PFETs are employed within the digital circuit,and are simultaneously transitioned from backgate biased standby mode toactive mode. This can be achieve by using the PFET backgate charges inthe n-wells to raise the NFET backgate voltage during the transitionfrom standby to active mode, and the NFET backgate charges can beemployed to lower the PFET backgate voltage during the transition. Thus,transition occurs in this embodiment without the need for any externalpower, which results in a faster transition. Note that a one-to-onecorrespondence between the number of NFETs and the number of PFETs isnot necessary to implementation of this invention, and is one exampleonly. The n-wells or PFET backgates are assumed to be electricallyconnected via the backgate control circuit, and the p-wells or NFETbackgates are assumed to be electrically connected via the backgatecontrol circuit. As a result, the n-wells and p-wells may each becollectively viewed as a large capacitance (as explained above).

FIG. 5 illustrates a digital circuit 500 comprising one or moren-channel transistors and one or more p-channel transistors, and abackgate control circuit 520. Additionally, a shunt switch 510 isdepicted for selectively shunting charge from the n-wells of thep-channel transistors to the p-wells of the n-channel transistors duringswitching from standby to active mode. As a specific example, inbackgate biased standby mode the n-type wells might be at 1.5 volts andthe p-type wells at −0.5 volts. Thus, to transition from backgate biasedstandby to active mode, charge is transferred from the n-wells thep-wells until, for example, the n-wells are at 1.0 volts and the p-wellsare at 0 volts, which returns both the p-channel transistors and then-channel transistors to active mode.

FIG. 6 illustrates a more detailed embodiment of an integrated circuitcomprising a digital circuit 600 and a backgate control circuit 620. Inthis embodiment, a shunt switch 610 is again provided for selectivelyshunting charge from, for example, the n-wells to the p-wells associatedwith one or more p-channel transistors and one or more n-channeltransistors, respectively, of the digital circuit during transitioningof the digital circuit from backgate biased standby mode to active mode.In one example, digital circuit 600 comprises a memory circuit with aplurality of n-channel transistors disposed in one or more p-wells and aplurality of p-channel transistors disposed in one or more n-wells. Asdescribed above, the p-wells are electrically interconnected by thebackgate control circuit and the n-wells are electrically interconnectedby the backgate control circuit such that each may be viewed as a singlelarge capacitance. Also provided are a first control switch 611 and asecond control switch 612 which electrically connect the respectivebackgate control circuit 620 to the p-wells and n-wells. In oneembodiment, backgate control circuit includes one or more PFET backgatecontrollers and one or more NFET backgate controllers. Also illustratedis an external power source 640 which includes a power supply 650 andwiring 651, 652 connecting power supply 650 to backgate control circuit620. When first control switch 611 and second control switch 612 areclosed, backgate control circuit 620 provides a fine level of voltagecontrol to the backgate bodies employing, for example, the externalpower source 640.

The external power source 640 may also be employed, for example, whenplacing digital circuit 600 into a backgate biased standby or sleepmode. However, as illustrated in FIG. 7, the external power source isnot employed when transitioning from backgate biased standby mode toactive mode, in accordance with an aspect of the present invention.

Referring to FIG. 7, in one embodiment, digital circuit transition toactive mode begins 700 with opening the control switches (611,612 ofFIG. 6) of the backgate control circuit, thereby disconnecting theexternal power source, and closing the shunt switch (610 of FIG. 6),which causes charge to be transferred from the n-well(s) to thep-well(s) within the digital circuit. The backgate control circuitmonitors the n-well voltage and/or the p-well voltage 720 and determineswhether a threshold voltage has been reached 730. If “no”, then thebackgate control circuit continues to monitor the backgate voltagelevel(s). Once one or more well voltages reaches a predefined thresholdvoltage level, then the backgate control circuit opens the shunt switchand closes the controller switches, enabling the backgate controlcircuit to again directly control the supply of power to the backgates,which completes transition of the transistors of the digital circuit toactive mode operation 750.

As noted above, as one example, in standby mode the n-wells may be at a1.5 voltage level, and the p-wells at a −0.5 voltage level. Thus,wake-up is achieved by shunting charge from the n-wells to the p-wellsvia the shunt switch until, for example, the n-wells reach a thresholdvoltage level of 1.0 volts and/or the p-wells reach a threshold voltagelevel of 0.0 volts.

FIG. 8 is a graph comparing an externally powered wake-up approach and awake-up approach employing backgate charge transfer such as describedherein. As illustrated, using backgate charge transfer the n-wells andp-wells attain the desired threshold level in approximately 1/20 thetime required for transitioning the backgates using the externallypowered wake-up approach, wherein current kickback and supply resistancelimit the speed of the voltage transition. Further, using an externalpower source to effectuate the transition can cause local voltagebounces due to kickback, which can contaminate memory integrity anddamage devices with voltage spikes. The backgate charge transferapproach described herein advantageously eliminates these problems.

Although preferred embodiments have been depicted and described indetail herein, it will be apparent to those skilled in the relevant artthat various modifications, additions, substitutions and the like can bemade without departing from the spirit of the invention and these aretherefore considered to be within the scope of the invention as definedin the following claims.

1. A method of fabricating a digital circuit comprising: obtaining asemiconductor substrate; disposing at least one p-type well in thesemiconductor substrate and disposing at least one n-type well in thesemiconductor substrate; providing at least one n-channel transistorhaving a gate, a drain and a source disposed at least partially in theat least one p-type well, and providing at least one p-channeltransistor having a gate, a drain and a source disposed at leastpartially in the at least one n-type well; and providing a backgatecontrol circuit electrically coupled to the at least one p-type well andto the at least one n-type well via a first control switch and a secondcontrol switch; and providing a shunt switch electrically connectedbetween the at least one n-type well and the at least one p-type well,the backgate control circuit being coupled to the shunt switch forclosing the shunt switch when facilitating transitioning of the at leastone n-channel transistor and the at least one p-channel transistor fromstandby mode to active mode, resulting in shunting of charge from the atleast one n-type well to the at least one p-type well, and for openingthe shunt switch when a well voltage of the at least one n-type well orthe at least one p-type well reaches a threshold voltage indicative of atransition of the at least one p-channel transistor or the at least onen-channel transistor to active mode, wherein subsequent to reachingactive mode, and opening the shunt switch, the backgate control circuitcloses at least one of the first control switch or the second controlswitch to actively maintain during active mode at least one of voltageof the p-type well at a first voltage level or voltage of the n-typewell at a second voltage level, wherein the first voltage level and thesecond voltage level are different active mode voltage levels.
 2. Themethod of claim 1, wherein the at least one backgate control circuitsimultaneously transitions the at least one n-channel transistor and theat least one p-channel transistor from standby mode to active modewithout draining charge from the at least one n-type well to a chargesink external to the digital circuit and without raising charge in theat least one p-type well from a charge source external to the digitalcircuit.
 3. The method of claim 1, wherein providing the backgatecontrol circuit further comprises providing at least one voltage sensorcoupled to at least one well of the at least one p-type well and the atleast one n-type well for monitoring well voltage thereof, and whereinthe backgate control circuit is configured to discontinue shunting ofcharge from the at least one n-type well to the at least one p-type wellwhen the well voltage reaches a threshold voltage indicative of at leastone of the at least one n-channel transistor or the at least onep-channel transistor having transitioned to active mode.
 4. The methodof claim 3, wherein the well voltage being monitored is the well voltageof the at least one n-type well, and the threshold voltage indicates atransition of the at least one p-channel transistor to active mode, andwherein the backgate control circuit discontinues shunting of chargefrom the at least one n-type well to the at least one p-type well whenthe well voltage of the at least one n-type well drops to the thresholdvoltage.
 5. The method of claim 3, wherein the well voltage beingmonitored is the well voltage of the at least one p-type well, and thethreshold voltage indicates a transition of the at least one n-channeltransistor to active mode, and wherein the backgate control circuitdiscontinues shunting of charge from the at least one n-type well to theat least one p-type well when the well voltage of the at least onep-type well rises to the threshold voltage.
 6. The method of claim 1,wherein the backgate control circuit discontinues the shunting of chargeby opening the shunt switch before voltage of the at least one n-typewell equals voltage of the at least one p-type well when transitioningfrom standby mode to active mode.
 7. The method of claim 1, wherein thedigital circuit is a static random access memory circuit.
 8. The methodof claim 1, further comprising disposing multiple p-type wells in thesemiconductor substrate, and disposing multiple n-type wells in thesemiconductor substrate, and providing multiple n-channel transistorsdisposed at least partially in the multiple p-type wells, and providingmultiple p-channel transistors disposed at least partially in themultiple n-type wells, and wherein providing the backgate controlcircuit comprises providing the backgate control circuit to facilitatesimultaneous transitioning of the multiple n-channel transistors and themultiple p-channel transistors from standby mode to active mode byshunting charge from the multiple n-type wells to the multiple p-typewells without coupling the multiple p-type wells or the multiple n-typewells to a power source, and wherein the standby mode is a backgatebiased standby mode of the digital circuit and transition to active modeis accomplished using charge stored within the digital circuit.